feb.1999 mitsubishi transistor modules QM400HA-H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, dc motor controllers, nc equipment QM400HA-H ? i c collector current ........................ 400a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 93 10 18.5 25 27 26.5 f 6.5 m6 62 48 10 10 9 9 37.5 28 25 13.5 107 9 8 e 16 16 c bx be 24.5 7 13 4.5 32.2 35 b c bx e e m4 label
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 600 600 600 7 400 400 1500 10 4000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 640 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM400HA-H high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =400a, i b =0.53a Ci c =400a (diode forward voltage) i c =400a, v ce =2.5v v cc =300v, i c =400a, i b1 =0.8a, Ci b2 =8a transistor part diode part conductive grease applied typ. max. 5.0 5.0 400 2.5 3.5 1.8 3.0 10 35 0.083 0.25 0.04
feb.1999 ? 10 ? 10 1 10 0 10 3 10 2 10 1 10 0 10 ? 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 2 10 3 10 4 10 5 10 800 600 400 200 0 0 1000 12345 t j =25? i b =1a i b =2a i b =400ma i b =200ma 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v ce =2.5v t j =25? t j =125? v ce =5.0v 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.4 2.6 2.8 3.0 3.2 3.4 v ce =2.5v t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t j =25? t j =125? v be(sat) v ce(sat) ? b =0.53a 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 i c =100a t j =25? t j =125? i c =200a i c =400a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 1 10 23457 2 10 23457 3 10 t f t on t s ? b2 =8a t j =25? t j =125? v cc =300v i b1 =0.8a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM400HA-H high power switching use insulated type
feb.1999 0 10 ? 10 ? 10 ? 10 1 10 0 10 3 10 2 10 1 10 0 10 0 10 3 10 2 10 1 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 v cc =300v t j =25? t j =125? i c =400a i b1 =0.8a t f t s 800 200 0 0 200 800 600 400 400 600 ?a t j =125? ? b2 =3a ?a 100 300 500 700 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 100 s dc 1m s 200 s 50 s 10m s 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0.08 0.06 0.02 0 444 23457 0.04 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 0.4 0.8 1.2 1.5 2.0 t j =125? t j =25? non repetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM400HA-H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 1 10 0 10 0 10 ? 10 ? 10 ? 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 1000 2000 3000 4000 5000 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.1 0 444 23457 0.2 transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) conduction time (cycles at 60hz) time (s) mitsubishi transistor modules QM400HA-H high power switching use insulated type z th (jCc) ( c/ w) surge collector reverse current Ci csm (a)
|
